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TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 1 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com applications ? marine radar ? satellite communications ? point to point communications ? military communications ? broadband amplifiers ? high efficiency amplifiers product features ? frequency range: dc - 14 ghz ? 38.4 dbm nominal p sat at 3 ghz ? 75.7% maximum pae at 3 ghz ? 20.4 db nominal power gain at 3 ghz ? bias: v d = 32 v, i dq = 25 ma ? technology: tqgan25 on sic ? chip dimensions: 1.01 x 0.82 x 0.10 mm ordering information part eccn description TGF2952 ear99 7 watt gan hemt general description the triquint TGF2952 is a discrete 1.25 mm gan on sic hemt which operates from dc-14 ghz. the TGF2952 is designed using triquint?s proven tqgan25 production process. this process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. the TGF2952 typically provides 38.4 dbm of saturated output power with power gain of 20.4 db at 3 ghz. the maximum power added efficiency is 75.7 % which ma kes the TGF2952 appropriate for high efficiency applica tions. lead-free and rohs compliant. pad configuration pad no. symbol 1 v g / rf in 2 v d / rf out backside source / ground functional block diagram
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 2 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com absolute maximum ratings parameter value drain to gate voltage (v dg ) 100 v drain voltage (v d ) 40 v gate voltage range (v g ) -10 to 0 v drain current (i d ) 0.75 a gate current (i g ) -1.25 to 2.1 ma power dissipation (p d ) 10.5 w cw input power (p in ) 33 dbm channel temperature (t ch ) 275c mounting temperature (30 sec.) 320c storage temperature ?65 to 150c operation of this device outside the parameter range s given above may cause permanent damage. these are stress ratings o nly, and functional operation of the device at these conditi ons is not implied. recommended operating conditions parameter value drain voltage range (v d ) 32 v drain quiescent current (i dq ) 25 ma drain current under rf drive ( i d ) (1) 480 ma pinch-off gate voltage (v g ) ?2.7 v (typ.) channel temperature (t ch ) 225c (max.) (1) 100us pw, 10% pulses at 3ghz, power tuned
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 3 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com rf characterization ? model optimum power tune simulation conditions unless otherwise noted: t = 25 c, bond wires not included, pulse: 100us pw, 10%. see page 19 for reference planes. parameter typical value units frequency (f) 1 3 6 10 15 ghz drain voltage (v d ) 32 32 32 32 32 v bias current (i dq ) 25 25 25 25 25 ma output p3db (p 3db ) 38.4 38.6 38.5 38.4 38.2 dbm pae @ p 3db (pae 3db ) 64.9 62.3 59.4 54.0 47.3 % gain @ p3db (g 3db ) 26.8 20.4 15.3 11.4 8.5 db parallel output resistance (1) (r p ) 94.3 95.2 85.9 70.1 49.8 ? mm parallel output capacitance (1) (c p ) -0.018 0.125 0.199 0.205 0.223 pf/mm load impedance (zl) 75.3-j2.84 72.5+j16.3 48.5+j31.3 30.8+j27.9 19.0+j19.9 source impedance (zs) 11.6+j76.0 4.02+j23.2 3.80+j12.2 4.06+j4.51 3.97-j0.22 notes: 1. large signal equivalent output network (normalize d). rf characterization ? model optimum efficiency tune simulation conditions unless otherwise noted: t = 25 c, bond wires not included, pulse: 100us pw, 10%. see page 19 for reference planes. parameter typical value units frequency (f) 1 3 6 10 15 ghz drain voltage (v d ) 32 32 32 32 32 v bias current (i dq ) 25 25 25 25 25 ma output p3db (p 3db ) 36.7 37.3 37.4 37.6 37.9 dbm pae @ p 3db (pae 3db ) 70.3 67.5 63.9 57.7 48.9 % gain @ p3db (g 3db ) 28.1 21.9 16.0 11.9 8.7 db parallel output resistance (1) (r p ) 168.4 149.3 134.0 93.4 52.5 ? mm parallel output capacitance (1) (c p ) 0.249 0.267 0.273 0.276 0.267 pf/mm load impedance (zl) 126+j33.2 76.3+j57.4 36.8+j50.9 20.6+j33.4 15.3+j20.2 source impedance (zs) 11.6+j76.0 4.02+j23.2 3.80+j12.2 4.06+j4.51 3.97-j0.22 notes: 1. large signal equivalent output network (normalize d).
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 4 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com rf characterization ? measured optimum power tune measured conditions unless otherwise noted: t = 25c , bond wires not included, pulse: 100us pw, 10%. s ee page 19 for reference planes. parameter typical value units frequency (f) 3 6 ghz drain voltage (v d ) 32 32 v bias current (i dq ) 25 25 ma input power 18 23 dbm output power 38.4 38.3 dbm pae 66.7 61.9 % gain 20.4 15.3 db load impedance (zl) 53.6+j33.3 36.1+j32.0 source impedance (zs) 10.1+j23.6 9.43+j12.0 rf characterization ? measured optimum efficiency t une measured conditions unless otherwise noted: t = 25c , bond wires not included, pulse: 100us pw, 10%. s ee page 19 for reference planes. parameter typical value units frequency (f) 3 6 ghz drain voltage (v d ) 32 32 v bias current (i dq ) 25 25 ma input power 18 23 dbm output power 37.8 37.7 dbm pae 75.7 72.0 % gain 19.8 14.7 db load impedance (zl) 85.6+j54.8 29.5+j50.7 source impedance (zs) 10.1+j23.6 9.43+j12.0
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 5 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com thermal and reliability information - pulsed (1) parameter test conditions value units thermal resistance, jc p d = 7.5 w, tbaseplate = 85c pulse: 100us, 5% 15.1 oc/w channel temperature, t ch 199 c median lifetime, t m 1.78e07 hrs thermal resistance, jc p d = 7.5 w, tbaseplate = 85c pulse: 100us, 10% 15.5 c/w channel temperature, t ch 201 c median lifetime, t m 1.41e07 hrs thermal resistance, jc p d = 7.5 w, tbaseplate = 85c pulse: 100us, 20% 16.0 oc/w channel temperature, t ch 205 c median lifetime, t m 9.85e06 hrs thermal resistance, jc p d = 7.5 w, tbaseplate = 85c pulse: 100us, 50% 17.8 oc/w channel temperature, t ch 219 c median lifetime, t m 3.15e06 hrs notes: 1. assumes eutectic attach using 1mil thick 80/20 a usn mounted to a 10 mil cumo carrier plate. thermal and reliability information - cw (1) parameter test conditions value units thermal resistance, jc p d = 3.78 w, tbaseplate = 85c cw 18.0 oc/w channel temperature, t ch 153 c median lifetime, t m 1.75e09 hrs thermal resistance, jc p d = 5.04 w, tbaseplate = 85c cw 18.8 c/w channel temperature, t ch 180 c median lifetime, t m 1.04e08 hrs thermal resistance, jc p d = 6.30 w, tbaseplate = 85c cw 20 oc/w channel temperature, t ch 211 c median lifetime, t m 5.99e06 hrs thermal resistance, jc p d = 7.56 w, tbaseplate = 85c cw 21.2 oc/w channel temperature, t ch 245 c median lifetime, t m 3.79e05 hrs notes: 1. assumes eutectic attach using 1mil thick 80/20 a usn mounted to a 10 mil cumo carrier plate.
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 6 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com median lifetime 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 1e+11 1e+12 1e+13 1e+14 1e+15 1e+16 1e+17 1e+18 25 50 75 100 125 150 175 200 225 250 275 median lifetime, t m (hours) channel temperature, t ch ( c) median lifetime vs. channel temperature
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 7 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com maximum channel temperature - pulsed 140.0 160.0 180.0 200.0 220.0 240.0 260.0 1.00e-06 1.00e-05 1.00e-04 1.00e-03 1.00e-02 1.00e-01 maximum channel temperature ( o c) pulse width (sec) maximum channel temperature carrier plate base fixed at 85 o c, pdiss = 7.5 w 5% duty cycle 10% duty cycle 20% duty cycle 50% duty cycle
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 8 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com maximum channel temperature - cw 80 100 120 140 160 180 200 220 240 260 280 300 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 peak temperature, c cw power dissipation, w peak temperature vs. pdiss (w) for fixed 85 c on cumo carrier plate carrier plate held at 85c recommended operating limit
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 9 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com model maximum gain performance bond wires are not included. see page 19 for refer ence planes. 0 5 10 15 20 25 30 5 10 15 20 25 30 35 maximum gain vs. frequency frequency [ghz] gain [db] vd = 12v, idq = 25ma vd = 12v, idq = 62.5ma vd = 32v, idq = 25ma vd = 32v, idq = 62.5ma
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 10 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com measured maximum gain performance bond wires are not included. see page 19 for refer ence planes. 0 5 10 15 20 25 30 5 10 15 20 25 30 35 maximum gain vs. frequency frequency [ghz] gain [db] vd = 32v, idq = 25ma
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 11 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com model load pull contours vds = 32v, idq = 25ma, simulated signal: 10% pulses . bond wires not included. see page 19 for referen ce planes. 3db compression performance referenced to large-sig nal peak gain. 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2 3 4 5 6 7 8 9 1 . 6 1.8 2 3 1ghz, load-pull 38.3 38.1 37.9 36.1 35.6 35.1 68.1 63.1 58.1 ? ?? ? max power is 38.4dbm at z = 75.328-2.843i ? ? = 0.2025-0.0181i ? ?? ? max gain is 36.5db at z = 22.789+59.357i ? ? = 0.1749+0.6729i ? ?? ? max pae is 70.3% at z = 125.971+33.196i ? ? = 0.4513+0.1035i zo = 50 ? zs(fo) = 11.57+75.96i ? zs(2fo) = 50 ? zs(3fo) = 50 ? zl(2fo) = 50 ? zl(3fo) = 50 ? power gain pae
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 12 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com model load pull contours vds = 32v, idq = 25ma, simulated signal: 10% pulses . bond wires not included. see page 19 for referen ce planes. 3db compression performance referenced to large-sig nal peak gain. 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2 3 4 5 2 3ghz, load-pull 38.6 38.4 38.2 25.8 25.3 24.8 65.9 60.9 55.9 ? ?? ? max power is 38.6dbm at z = 72.504+16.349i ? ? = 0.198+0.107i ? ?? ? max gain is 26.1db at z = 20.868+59.545i ? ? = 0.1729+0.695i ? ?? ? max pae is 67.5% at z = 76.328+57.36i ? ? = 0.3437+0.298i zo = 50 ? zs(fo) = 4.02+23.21i ? zs(2fo) = 50 ? zs(3fo) = 50 ? zl(2fo) = 50 ? zl(3fo) = 50 ? power gain pae
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 13 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com model load pull contours vds = 32v, idq = 25ma, simulated signal: 10% pulses . bond wires not included. see page 19 for referen ce planes. 3db compression performance referenced to large-sig nal peak gain. 0.4 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2 3 4 0 . 6 0 . 7 0 . 8 0 . 9 1 1 . 2 1 . 4 1 . 6 1.8 2 6ghz, load-pull 38.5 38.3 38.1 16.7 16.2 15.7 59.1 54.1 49.1 ? ?? ? max power is 38.5dbm at z = 48.472+31.339i ? ? = 0.0779+0.2935i ? ?? ? max gain is 16.9db at z = 16.611+44.172i ? ? = -0.0427+0.6915i ? ?? ? max pae is 63.9% at z = 36.842+50.934i ? ? = 0.1432+0.5025i zo = 50 ? zs(fo) = 3.8+12.24i ? zs(2fo) = 50 ? zs(3fo) = 50 ? zl(2fo) = 50 ? zl(3fo) = 50 ? power gain pae
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 14 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com model load pull contours vds = 32v, idq = 25ma, simulated signal: 10% pulses . bond wires not included. see page 19 for referen ce planes. 3db compression performance referenced to large-sig nal peak gain. 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 1 1 . 2 10ghz, load-pull 38.2 38 37.8 11.5 11 10.5 57.1 52.1 47.1 ? ?? ? max power is 38.4dbm at z = 30.799+27.931i ? ? = -0.1055+0.3822i ? ?? ? max gain is 12db at z = 15.356+37.06i ? ? = -0.1578+0.6565i ? ?? ? max pae is 57.7% at z = 20.587+33.379i ? ? = -0.1578+0.5475i zo = 50 ? zs(fo) = 4.06+4.51i ? zs(2fo) = 50 ? zs(3fo) = 50 ? zl(2fo) = 50 ? zl(3fo) = 50 ? power gain pae
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 15 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com model load pull contours vds = 32v, idq = 25ma, simulated signal: 10% pulses . bond wires not included. see page 19 for referen ce planes. 3db compression performance referenced to large-sig nal peak gain. 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 1 15ghz, load-pull 38 37.8 37.6 9.13 8.63 8.13 47.5 42.5 37.5 ? ?? ? max power is 38.2dbm at z = 19.012+19.91i ? ? = -0.3377+0.3859i ? ?? ? max gain is 9.1db at z = 10.207+26.965i ? ? = -0.3834+0.6196i ? ?? ? max pae is 48.9% at z = 15.338+20.158i ? ? = -0.3975+0.4312i zo = 50 ? zs(fo) = 3.97-0.22i ? zs(2fo) = 50 ? zs(3fo) = 50 ? zl(2fo) = 50 ? zl(3fo) = 50 ? power gain pae
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 16 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com model power tuned data bond wires not included. see page 19 for reference planes. 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 25 26 27 28 29 30 31 32 33 34 35 output power [dbm] gain [db] TGF2952 gain and pae vs. output power 1ghz, vds =32v, idq =25ma, 100us, 10%, power tuned zs = 11.6+j76.0 ? zl = 75.3-j2.84 ? 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 10 16 22 28 34 40 46 52 58 64 70 pae [%] gain pae 28 29 30 31 32 33 34 35 36 37 38 39 19 20 21 22 23 24 25 26 27 28 29 output power [dbm] gain [db] TGF2952 gain and pae vs. output power 3ghz, vds =32v, idq =25ma, 100us, 10%, power tuned zs = 4.02+j23.2 ? zl = 72.5+j16.3 ? 28 29 30 31 32 33 34 35 36 37 38 39 15 20 25 30 35 40 45 50 55 60 65 pae [%] gain pae 28 29 30 31 32 33 34 35 36 37 38 39 14 15 16 17 18 19 20 21 22 23 24 output power [dbm] gain [db] TGF2952 gain and pae vs. output power 6ghz, vds =32v, idq =25ma, 100us, 10%, power tuned zs = 3.80+j12.2 ? zl = 48.5+j31.3 ? 28 29 30 31 32 33 34 35 36 37 38 39 15 20 25 30 35 40 45 50 55 60 65 pae [%] gain pae 28 29 30 31 32 33 34 35 36 37 38 39 10 11 12 13 14 15 16 17 18 19 20 output power [dbm] gain [db] TGF2952 gain and pae vs. output power 10ghz, vds =32v, idq =25ma, 100us, 10%, power tuned zs = 4.06+j4.51 ? zl = 30.8+j27.9 ? 28 29 30 31 32 33 34 35 36 37 38 39 15 20 25 30 35 40 45 50 55 60 65 pae [%] gain pae 28 29 30 31 32 33 34 35 36 37 38 39 6 7 8 9 10 11 12 13 14 15 16 output power [dbm] gain [db] TGF2952 gain and pae vs. output power 15ghz, vds =32v, idq =25ma, 100us, 10%, power tuned zs = 3.97-j0.22 ? zl = 19.0+j19.9 ? 28 29 30 31 32 33 34 35 36 37 38 39 10 15 20 25 30 35 40 45 50 55 60 pae [%] gain pae
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 17 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com model efficiency tuned data bond wires not included. see page 19 for reference planes. 24 25 26 27 28 29 30 31 32 33 34 35 36 37 27 28 29 30 31 32 33 34 35 36 37 output power [dbm] gain [db] TGF2952 gain and pae vs. output power 1ghz, vds =32v, idq =25ma, 100us, 10%, efficiency t uned zs = 11.6+j76.0 ? zl = 126+j33.2 ? 24 25 26 27 28 29 30 31 32 33 34 35 36 37 0 8 16 24 32 40 48 56 64 72 80 pae [%] gain pae 27 28 29 30 31 32 33 34 35 36 37 38 21 22 23 24 25 26 27 28 29 30 31 output power [dbm] gain [db] TGF2952 gain and pae vs. output power 3ghz, vds =32v, idq =25ma, 100us, 10%, efficiency t uned zs = 4.02+j23.2 ? zl = 76.3+j57.4 ? 27 28 29 30 31 32 33 34 35 36 37 38 20 25 30 35 40 45 50 55 60 65 70 pae [%] gain pae 27 28 29 30 31 32 33 34 35 36 37 38 15 16 17 18 19 20 21 22 23 24 25 output power [dbm] gain [db] TGF2952 gain and pae vs. output power 6ghz, vds =32v, idq =25ma, 100us, 10%, efficiency t uned zs = 3.80+j12.2 ? zl = 36.8+j50.9 ? 27 28 29 30 31 32 33 34 35 36 37 38 15 20 25 30 35 40 45 50 55 60 65 pae [%] gain pae 27 28 29 30 31 32 33 34 35 36 37 38 10 11 12 13 14 15 16 17 18 19 20 output power [dbm] gain [db] TGF2952 gain and pae vs. output power 10ghz, vds =32v, idq =25ma, 100us, 10%, efficiency tuned zs = 4.06+j4.51 ? zl = 20.6+j33.4 ? 27 28 29 30 31 32 33 34 35 36 37 38 10 15 20 25 30 35 40 45 50 55 60 pae [%] gain pae 27 28 29 30 31 32 33 34 35 36 37 38 7 8 9 10 11 12 13 14 15 16 17 output power [dbm] gain [db] TGF2952 gain and pae vs. output power 15ghz, vds =32v, idq =25ma, 100us, 10%, efficiency tuned zs = 3.97-j0.22 ? zl = 15.3+j20.2 ? 27 28 29 30 31 32 33 34 35 36 37 38 10 15 20 25 30 35 40 45 50 55 60 pae [%] gain pae
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 18 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com measured power tuned data bond wires not included. see page 19 for reference planes. 29 30 31 32 33 34 35 36 37 38 39 18 19 20 21 22 23 24 25 26 27 28 output power [dbm] gain [db] 29 30 31 32 33 34 35 36 37 38 39 25 30 35 40 45 50 55 60 65 70 75 pae [%] 3ghz, 32v, 25ma, 100us pw, 10%, power tuned ? s = 0.717 ? 128 ? s2 = 0.673 ? 33 ? s3 = 0.548 ? 62 ? l = 0.306 ? 58 ? l2 = 0.251 ? -112 ? l3 = 0.034 ? -164 zo = 50 ? 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 12 13 14 15 16 17 18 19 20 21 22 output power [dbm] gain [db] 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 10 16 22 28 34 40 46 52 58 64 70 pae [%] 6ghz, 32v, 25ma, 100us pw, 10%, power tuned ? s = 0.698 ? 152 ? s2 = 0.765 ? 110 ? s3 = 0 ? l = 0.515 ? 88 ? l2 = 0.558 ? -67 ? l3 = 0 zo = 50 ?
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 19 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com mechanical drawing bond pads pad no. description dimensions 1 gate 0.125 x 0.125 2 drain 0.150 x 0.246 die backside source / ground 1.007 x 0.821 1. units: millimeters 2. thickness: 0.100 mm 3. die xy size tolerance: 0.050 mm reference planes
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 20 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com assembly notes component placement and adhesive attachment assembl y notes: ? vacuum pencils and/or vacuum collets are the prefe rred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement . ? organic attachment (i.e. epoxy) not recommended. reflow process assembly notes: ? use ausn (80/20) solder and limit exposure to temp eratures above 300 c to 3-4 minutes, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matching is criti cal for long-term reliability. ? devices must be stored in a dry nitrogen atmospher e. interconnect process assembly notes: ? ball bonding is the preferred interconnect techniq ue, except where noted on the assembly diagram. ? force, time, and ultrasonics are critical bonding parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire. model a model is available for download from modelithics (at http://www.modelithics.com/mvp/triquint&tab=3 ) by approved triquint customers. the model is compatible with t he industry?s most popular design software includin g agilent ads and national instrume nts/awr applications. once on the modelithics web page, the user will need to register for a free license before being granted the download.
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 21 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com disclaimer gan/sic devices are susceptible to damage from elec trostatic discharge. proper precautions should be o bserved during handling, assembly and test. bias-up procedure bias-down procedure 1. v g set to -5 v. 2. v d set to 32 v. 3. adjust v g more positive until quiescent i d is 25 ma. 4. apply rf signal. 1. turn off rf signal. 2. turn off v d and wait 1 second to allow drain capacitor dissipation. 3. turn off v g .
TGF2952 7 watt discrete power gan on sic hemt datasheet: rev a 10-20-14 - 22 of 22 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com product compliance information esd sensitivity ratings caution! esd-sensitive device esd rating: tbd value: tbd test: tbd standard: tbd solderability comp atible with gold/tin (320c maximum reflow temperature) soldering processes. rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazar dous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free contact information for the latest specifications, additional product i nformation, worldwide sales and distribution locati ons, and information about triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-sales@triquint.com fax: +1.972.994.8504 for technical questions and application information : email: info-products@triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the informat ion contained herein. triquint assumes no responsibility or liability wha tsoever for any of the information contained herein . triquint assumes no responsibility or liability wha tsoever for the use of the information contained he rein. the information contained herein is provid ed "as is, where is" and with all faults, and the ent ire risk associated with such information is entirely with the user. all information contained herein is subject to chan ge without notice. customers should obtain and verify the latest relevant inform a tion before placing orders for triquint products. the information contained herein or any use of such information doe s not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights , whether with r egard to such information itself or anything descri bed by such information. triquint products are not warranted or authorized f or use as critical components in medical, life-savi ng, or life- sustaining applications, or other applications where a failure w ould reasonably be expected to cause severe persona l injury or death.

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